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Selectable phase formation in VAlN thin films by controlling Al+ subplantation depth [Elektronisk resurs]

Greczynski, Grzegorz (creator_code:aut_t)
Mraz, S. (creator_code:aut_t)
Hultman, Lars (creator_code:aut_t)
Schneider, J. M. (creator_code:aut_t)
Linköpings universitet Institutionen för fysik, kemi och biologi (creator_code:pbl_t)
record:Alt_name_t: Linköpings universitet. Institutionen för fysik och mätteknik (record:earlier_name_t)
record:Alt_name_t: Linköpings universitet. Institutionen för fysik och mätteknik, biologi och kemi (record:earlier_name_t)
record:Alt_name_t: IFM
record:Alt_name_t: Engelska : Department of Physics and Measurement Technology, Biology and Chemistry
record:Alt_name_t: Engelska : Department of Physics, Chemistry and Biology
Linköpings universitet Tekniska fakulteten (creator_code:pbl_t)
NATURE PUBLISHING GROUP 2017
language:Eng_t.
record:In_t: Scientific Reports. - 2045-2322. ; 7
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  • type:E_article_t
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  • We report on a thin film synthesis technique which allows for unprecedented control over the crystalline phase formation in metastable transition metal nitride based layers. For the model material system of V0.26Al0.74N, a complete transition from hexagonal to supersaturated cubic structure is achieved by tuning the incident energy, hence subplantation depth, of Al+ metal ions during reactive hybrid high power impulse magnetron sputtering of Al target and direct current magnetron sputtering of V target in Ar/N-2 gas mixture. These findings enable the phase selective synthesis of novel metastable materials that combine excellent mechanical properties, thermal stability, and oxidation resistance. 

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Natural Sciences  (hsv)
Chemical Sciences  (hsv)
Materials Chemistry  (hsv)
Naturvetenskap  (hsv)
Kemi  (hsv)
Materialkemi  (hsv)
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