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Magnetron Sputter Epitaxy of Group III-Nitride Semiconductor Nanorods / Alexandra Şerban

Şerban, Elena Alexandra, 1988- (författare)
Alternativt namn: Şerban, Alexandra, 1988-
Alternativt namn: Serban, Alexandra, 1988-
Alternativt namn: Serban, Elena Alexandra, 1988-
Birch, Jens 1960- (preses)
Hsiao, Ching-Lien 1975- (preses)
Persson, Per 1971- (preses)
Hultman, Lars 1960- (preses)
Thelander, Kimberly (opponent)
Linköpings universitet. Institutionen för fysik, kemi och biologi (utgivare)
Alternativt namn: Linköpings universitet. Institutionen för fysik och mätteknik (tidigare namn)
Alternativt namn: Linköpings universitet. Institutionen för fysik och mätteknik, biologi och kemi (tidigare namn)
Alternativt namn: IFM
Alternativt namn: Engelska : Department of Physics and Measurement Technology, Biology and Chemistry
Alternativt namn: Engelska : Department of Physics, Chemistry and Biology
Linköpings universitet Tekniska fakulteten (utgivare)
Publicerad: Linköping : Department of Physics, Chemistry and Biology, Linköping University, 2017
Tillverkad: 2017
Engelska 38 sidor (PDF)
Serie: Linköping Studies in Science and Technology. Thesis, 0280-7971
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  • E-bokAvhandling(Lic.-avh. (sammanfattning) Linköping : Linköpings universitet, 2017)
Sammanfattning Ämnesord
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  • The III-nitride semiconductors family includes gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), and related ternary and quaternary alloys. The research interest on this group of materials is sparked by the direct bandgaps, and excellent physical and chemical properties. Moreover, the ternary alloys (InGaN, InAlN and AlGaN) present the advantage of bandgap tuning, giving access to the whole visible spectrum, from near infrared into deep ultraviolet wavelengths. The intrinsic properties of III-nitride materials can be combined with characteristical features of nanodimension and geometry in nanorod structures. Moreover, nanorods offer the advantage of avoiding problems arising from the lack of native substrates, like lattice and thermal expansion, film - substrate mismatch. The growth and characterization of group III-nitride semiconductos nanorods, namely InAlN and GaN nanorods, is presented in this thesis. All the nanostructures were grown by employing direct-current reactive magnetron sputter epitaxy. InxAl1-xN self-assembled, core-shell nanorods on Si(111) substrates were demonstrated. A comprehensive study of temperature effect upon the morphology and composition of the nanorods was realized. The radial nanorod heterostructure consists of In-rich cores surrounded by Al-rich shells with different thicknesses. The spontaneous formation of core-shell nanorods is suggested to originate from phase separation due to spinodal decomposition. As the growth temperature increase, In desorption is favored, resulting in thicker Al-rich shells and larger nanorod diameters. Both self-assembled and selective-area grown GaN nanorods are presented. Self-assembled growth of GaN nanorods on cost-effective substrates offers a cheaper alternative and simplifies device processing. Successful growth of high- quality GaN (exhibiting strong bandedge emission and high crystalline quality) on conductive templates/substrates such as Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti is supported by the possibility to be used as electrodes when integrated in optoelectronic devices. The self-assembled growth leads to mainly random nucleation, resulting in nanorods with large varieties of diameters, heights and densities within a single growth run. This translates into non-uniform properties and complicates device processing. These problems can be circumvented by employing selective-area growth. Pre-patterned substrates by nano-sphere lithography resulted in GaN nanorods with controlled length, diameter, shape, and density. Well-faceted c-axis oriented GaN nanorods were grown directly onto the native SiOx layer inside nano-opening areas, exhibiting strong bandedge emission at room- temperature and single-mode lasing. Our studies on the growth mechanism revealed a different growth behavior when compared with selective-area grown GaN nanorods by MBE and MOCVD. The time-dependent growth series helped define a comprehensive growth mechanism from the initial thin wetting layer formed inside the openings, to the well-defined, uniform, hexagonal NRs resulted from the coalescence of multiple initial nuclei. 

Ämnesord

Halvledarkomponenter  (sao)
Nanorör  (sao)
Natural Sciences  (hsv)
Physical Sciences  (hsv)
Condensed Matter Physics  (hsv)
Naturvetenskap  (hsv)
Fysik  (hsv)
Den kondenserade materiens fysik  (hsv)
Nanotubes  (LCSH)

Klassifikation

621.38152 (DDC)
Pcib (kssb/8 (machine generated))
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