Physics and applications of dilute nitrides [Elektronisk resurs] / edited by Irina A. Buyanova and Weimin M. Chen.

• CONTENTS About the Series Preface Contributing Authors 1 An Atomistic View of the Electronic Structure of Mixed Anion III-V Nitrides 2 Band Anticrossing in III-N-V Alloys: Theory and Experiments 3 Tight-Binding and k·p Theory of Dilute Nitride Alloys 4 Electron Effective Masses of Dilute Nitrides: Experiment 5 Electronic Properties of (Ga, In)(N, As)-Based Heterostructures 6 Role of Hydrogen in Dilute Nitrides 7 Raman Scattering in Dilute GaAsN and GaPN Alloys 8 Theory of Defects in Dilute Nitrides 9 Recombination Processes in Dilute Nitrides 10 Growth, Characterization, and Band-Gap Engineering of Dilute Nitrides 11 GaInNAs Long-Wavelength Lasers for 1.3-um-Range Applications 12 Recombination Processes in GaInNAs Long-Wavelength Lasers 13 Photovoltaic Applications of Dilute Nitrides 14 GaInNAs and GaInNAsSb Long-Wavelength Lasers Index. 

Ämnesord

Halvledarkomponenter  (sao)

Semiconductors  -- Materials. (LCSH)

Genre

Electronic books.  (LCSH)

Klassifikation

TK7871.15.N57 (LCC)

621.38152 (DDC)

Pcib (kssb/8 (machine generated))