Physics and applications of dilute nitrides [Elektronisk resurs] / edited by Irina A. Buyanova and Weimin M. Chen.
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- Buyanova, Irina A., 1960- (redaktör/utgivare)
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Alternativt namn: Buyanova, Irina, 1960-
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- Chen, Weimin M., 1959- (redaktör/utgivare)
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Alternativt namn: Chen, Weimin, 1959-
- ISBN 0203334841
- Publicerad: New York ; Taylor & Francis, 2004
- Engelska xiv, 442 p.
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Serie: Optoelectronic properties of semiconductors and superlattices ; v. 21
Innehållsförteckning
Ämnesord
Stäng
- CONTENTS About the Series Preface Contributing Authors 1 An Atomistic View of the Electronic Structure of Mixed Anion III-V Nitrides 2 Band Anticrossing in III-N-V Alloys: Theory and Experiments 3 Tight-Binding and k·p Theory of Dilute Nitride Alloys 4 Electron Effective Masses of Dilute Nitrides: Experiment 5 Electronic Properties of (Ga, In)(N, As)-Based Heterostructures 6 Role of Hydrogen in Dilute Nitrides 7 Raman Scattering in Dilute GaAsN and GaPN Alloys 8 Theory of Defects in Dilute Nitrides 9 Recombination Processes in Dilute Nitrides 10 Growth, Characterization, and Band-Gap Engineering of Dilute Nitrides 11 GaInNAs Long-Wavelength Lasers for 1.3-um-Range Applications 12 Recombination Processes in GaInNAs Long-Wavelength Lasers 13 Photovoltaic Applications of Dilute Nitrides 14 GaInNAs and GaInNAsSb Long-Wavelength Lasers Index.
Ämnesord
- Halvledarkomponenter (sao)
- Semiconductors -- Materials. (LCSH)
Genre
- Electronic books. (LCSH)
Klassifikation
- TK7871.15.N57 (LCC)
- 621.38152 (DDC)
- Pcib (kssb/8 (machine generated))
Inställningar
Hjälp
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